Cargando…
A gate-free monolayer WSe(2) pn diode
Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertic...
Autores principales: | Chen, Jhih-Wei, Lo, Shun-Tsung, Ho, Sheng-Chin, Wong, Sheng-Shong, Vu, Thi-Hai-Yen, Zhang, Xin-Quan, Liu, Yi-De, Chiou, Yu-You, Chen, Yu-Xun, Yang, Jan-Chi, Chen, Yi-Chun, Chu, Ying-Hao, Lee, Yi-Hsien, Chung, Chung-Jen, Chen, Tse-Ming, Chen, Chia-Hao, Wu, Chung-Lin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6081376/ https://www.ncbi.nlm.nih.gov/pubmed/30087328 http://dx.doi.org/10.1038/s41467-018-05326-x |
Ejemplares similares
-
Review of Recent Progress on Vertical GaN-Based PN Diodes
por: Pu, Taofei, et al.
Publicado: (2021) -
Evidence of indirect gap in monolayer WSe(2)
por: Hsu, Wei-Ting, et al.
Publicado: (2017) -
Optically initialized robust valley-polarized holes in monolayer WSe(2)
por: Hsu, Wei-Ting, et al.
Publicado: (2015) -
Atomistic insights into highly active reconstructed edges of monolayer 2H-WSe(2) photocatalyst
por: Qorbani, Mohammad, et al.
Publicado: (2022) -
Corrigendum: Optically initialized robust valley-polarized holes in monolayer WSe(2)
por: Hsu, Wei-Ting, et al.
Publicado: (2016)