Encapsulation of NEM Memory Switches for Monolithic-Three-Dimensional (M3D) CMOS–NEM Hybrid Circuits

Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the active region of NEM memory switches is one of the most challenging process technologies for the implementation of monolithic-three-dimensional (M3D) CMOS–NEM hybrid circuits. In this paper, we propose a...

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Detalles Bibliográficos
Autores principales: Jo, Hyun Chan, Choi, Woo Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6082272/
https://www.ncbi.nlm.nih.gov/pubmed/30424250
http://dx.doi.org/10.3390/mi9070317

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6082272/
https://www.ncbi.nlm.nih.gov/pubmed/30424250
http://dx.doi.org/10.3390/mi9070317

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