Cargando…
Encapsulation of NEM Memory Switches for Monolithic-Three-Dimensional (M3D) CMOS–NEM Hybrid Circuits
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the active region of NEM memory switches is one of the most challenging process technologies for the implementation of monolithic-three-dimensional (M3D) CMOS–NEM hybrid circuits. In this paper, we propose a...
Autores principales: | Jo, Hyun Chan, Choi, Woo Young |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6082272/ https://www.ncbi.nlm.nih.gov/pubmed/30424250 http://dx.doi.org/10.3390/mi9070317 |
Ejemplares similares
-
CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
por: Muñoz-Gamarra, Jose Luis, et al.
Publicado: (2016) -
Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction
por: Marigó, Eloi, et al.
Publicado: (2015) -
Editorial for the Special Issue on Development of CMOS-MEMS/NEMS Devices
por: Verd, Jaume, et al.
Publicado: (2019) -
Materials and failures in MEMS and NEMS
por: Tiwari, Atul, et al.
Publicado: (2015) -
Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches
por: Zulkefli, Mohd Amir, et al.
Publicado: (2017)