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Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
The interfacial and electrical properties of atomic layer deposited AlN on n-GaN with different AlN thicknesses were investigated. According to capacitance–voltage (C–V) characteristics, the sample with a 7.4-nm-thick AlN showed the highest interface and oxide trap densities. When the AlN thickness...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6086779/ https://www.ncbi.nlm.nih.gov/pubmed/30097798 http://dx.doi.org/10.1186/s11671-018-2645-8 |