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Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN

The interfacial and electrical properties of atomic layer deposited AlN on n-GaN with different AlN thicknesses were investigated. According to capacitance–voltage (C–V) characteristics, the sample with a 7.4-nm-thick AlN showed the highest interface and oxide trap densities. When the AlN thickness...

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Detalles Bibliográficos
Autores principales: Kim, Hogyoung, Yoon, Hee Ju, Choi, Byung Joon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6086779/
https://www.ncbi.nlm.nih.gov/pubmed/30097798
http://dx.doi.org/10.1186/s11671-018-2645-8

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