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A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD
Hydrogenated nanocrystalline silicon (nc-Si:H) thin film has received a great deal of attention as a promising material for flat panel display transistors, solar cells, etc. However, the multiphase structure of nc-Si:H leads to many defects. One of the major challenges is how to reduce the defects c...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6086780/ https://www.ncbi.nlm.nih.gov/pubmed/30097800 http://dx.doi.org/10.1186/s11671-018-2641-z |