Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatment

We investigate the metal-insulator-semiconductor contacts on n-Ge utilizing a ZnO interfacial layer (IL) to overcome the Fermi-level pinning (FLP) effect at metal/Ge interface and reduce the barrier height for electrons. A small conduction band offset of 0.22 eV at the interface between ZnO and n-Ge...

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Detalles Bibliográficos
Autores principales: Zhang, Yi, Han, Genquan, Wu, Hao, Wang, Xiao, Liu, Yan, Zhang, Jincheng, Liu, Huan, Zheng, Haihua, Chen, Xue, Liu, Chang, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6093824/
https://www.ncbi.nlm.nih.gov/pubmed/30112730
http://dx.doi.org/10.1186/s11671-018-2650-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6093824/
https://www.ncbi.nlm.nih.gov/pubmed/30112730
http://dx.doi.org/10.1186/s11671-018-2650-y

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