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Resistive switching in nano-structures
Solid state memory and switching devices aimed at replacing the flash memory technology operate by switching from the high to low resistance when conductive filaments are created in response to the electric pulse. The filaments are identified with either structurally different protrusions or purely...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6093893/ https://www.ncbi.nlm.nih.gov/pubmed/30111880 http://dx.doi.org/10.1038/s41598-018-30700-6 |