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Resistive switching in nano-structures

Solid state memory and switching devices aimed at replacing the flash memory technology operate by switching from the high to low resistance when conductive filaments are created in response to the electric pulse. The filaments are identified with either structurally different protrusions or purely...

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Detalles Bibliográficos
Autores principales:	Karpov, V. G., Niraula, D.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6093893/ https://www.ncbi.nlm.nih.gov/pubmed/30111880 http://dx.doi.org/10.1038/s41598-018-30700-6

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