Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

2D GeSe possesses black phosphorous‐analog‐layered structure and shows excellent environmental stability, as well as highly anisotropic in‐plane properties. Additionally, its high absorption efficiency in the visible range and high charge carrier mobility render it promising for applications in opto...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhou, Xing, Hu, Xiaozong, Jin, Bao, Yu, Jing, Liu, Kailang, Li, Huiqiao, Zhai, Tianyou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2018
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6096999/
https://www.ncbi.nlm.nih.gov/pubmed/30128256
http://dx.doi.org/10.1002/advs.201800478

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6096999/
https://www.ncbi.nlm.nih.gov/pubmed/30128256
http://dx.doi.org/10.1002/advs.201800478

Ejemplares similares