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Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity
2D GeSe possesses black phosphorous‐analog‐layered structure and shows excellent environmental stability, as well as highly anisotropic in‐plane properties. Additionally, its high absorption efficiency in the visible range and high charge carrier mobility render it promising for applications in opto...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6096999/ https://www.ncbi.nlm.nih.gov/pubmed/30128256 http://dx.doi.org/10.1002/advs.201800478 |