Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures

We investigate a hybrid system containing an In(0.53)Ga(0.47)As quantum well (QW), separated by a thin 2 nm In(0.53)Ga(0.23)Al(0.24)As barrier from 1.55 µm emitting InAs quantum dots (QDs), grown by molecular beam epitaxy on an InP substrate. Photoreflectance and photoluminescence (PL) spectroscopie...

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Detalles Bibliográficos
Autores principales: Rudno-Rudziński, Wojciech, Syperek, Marcin, Andrzejewski, Janusz, Rogowicz, Ernest, Eisenstein, Gadi, Bauer, Sven, Sichkovskyi, Vitalii I., Reithmaier, Johann P., Sęk, Grzegorz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6098019/
https://www.ncbi.nlm.nih.gov/pubmed/30120329
http://dx.doi.org/10.1038/s41598-018-30950-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6098019/
https://www.ncbi.nlm.nih.gov/pubmed/30120329
http://dx.doi.org/10.1038/s41598-018-30950-4

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