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Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures
We investigate a hybrid system containing an In(0.53)Ga(0.47)As quantum well (QW), separated by a thin 2 nm In(0.53)Ga(0.23)Al(0.24)As barrier from 1.55 µm emitting InAs quantum dots (QDs), grown by molecular beam epitaxy on an InP substrate. Photoreflectance and photoluminescence (PL) spectroscopie...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6098019/ https://www.ncbi.nlm.nih.gov/pubmed/30120329 http://dx.doi.org/10.1038/s41598-018-30950-4 |
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author | Rudno-Rudziński, Wojciech Syperek, Marcin Andrzejewski, Janusz Rogowicz, Ernest Eisenstein, Gadi Bauer, Sven Sichkovskyi, Vitalii I. Reithmaier, Johann P. Sęk, Grzegorz |
author_facet | Rudno-Rudziński, Wojciech Syperek, Marcin Andrzejewski, Janusz Rogowicz, Ernest Eisenstein, Gadi Bauer, Sven Sichkovskyi, Vitalii I. Reithmaier, Johann P. Sęk, Grzegorz |
author_sort | Rudno-Rudziński, Wojciech |
collection | PubMed |
description | We investigate a hybrid system containing an In(0.53)Ga(0.47)As quantum well (QW), separated by a thin 2 nm In(0.53)Ga(0.23)Al(0.24)As barrier from 1.55 µm emitting InAs quantum dots (QDs), grown by molecular beam epitaxy on an InP substrate. Photoreflectance and photoluminescence (PL) spectroscopies are used to identify optical transitions in the system, with support of 8-band kp modelling. The main part of the work constitute the measurements and analysis of thermal quenching of PL for a set of samples with different QW widths (3–6 nm). Basing on Arrhenius plots, carrier escape channels from the dots are identified, pointing at the importance of carrier escape into the QW. A simple two level rate equations model is proposed and solved, exhibiting qualitative agreement with experimental observations. We show that for a narrow QW the escape process is less efficient than carrier supply via the QW due to the narrow barrier, resulting in improved emission intensity at room temperature. It proves that with carefully designed energy level structure, a hybrid QW/QD system can be used as an active region in telecom lasers with improved efficiencies. |
format | Online Article Text |
id | pubmed-6098019 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-60980192018-08-23 Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures Rudno-Rudziński, Wojciech Syperek, Marcin Andrzejewski, Janusz Rogowicz, Ernest Eisenstein, Gadi Bauer, Sven Sichkovskyi, Vitalii I. Reithmaier, Johann P. Sęk, Grzegorz Sci Rep Article We investigate a hybrid system containing an In(0.53)Ga(0.47)As quantum well (QW), separated by a thin 2 nm In(0.53)Ga(0.23)Al(0.24)As barrier from 1.55 µm emitting InAs quantum dots (QDs), grown by molecular beam epitaxy on an InP substrate. Photoreflectance and photoluminescence (PL) spectroscopies are used to identify optical transitions in the system, with support of 8-band kp modelling. The main part of the work constitute the measurements and analysis of thermal quenching of PL for a set of samples with different QW widths (3–6 nm). Basing on Arrhenius plots, carrier escape channels from the dots are identified, pointing at the importance of carrier escape into the QW. A simple two level rate equations model is proposed and solved, exhibiting qualitative agreement with experimental observations. We show that for a narrow QW the escape process is less efficient than carrier supply via the QW due to the narrow barrier, resulting in improved emission intensity at room temperature. It proves that with carefully designed energy level structure, a hybrid QW/QD system can be used as an active region in telecom lasers with improved efficiencies. Nature Publishing Group UK 2018-08-17 /pmc/articles/PMC6098019/ /pubmed/30120329 http://dx.doi.org/10.1038/s41598-018-30950-4 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Rudno-Rudziński, Wojciech Syperek, Marcin Andrzejewski, Janusz Rogowicz, Ernest Eisenstein, Gadi Bauer, Sven Sichkovskyi, Vitalii I. Reithmaier, Johann P. Sęk, Grzegorz Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures |
title | Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures |
title_full | Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures |
title_fullStr | Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures |
title_full_unstemmed | Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures |
title_short | Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures |
title_sort | carrier transfer efficiency and its influence on emission properties of telecom wavelength inp-based quantum dot – quantum well structures |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6098019/ https://www.ncbi.nlm.nih.gov/pubmed/30120329 http://dx.doi.org/10.1038/s41598-018-30950-4 |
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