Cargando…
Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures
We investigate a hybrid system containing an In(0.53)Ga(0.47)As quantum well (QW), separated by a thin 2 nm In(0.53)Ga(0.23)Al(0.24)As barrier from 1.55 µm emitting InAs quantum dots (QDs), grown by molecular beam epitaxy on an InP substrate. Photoreflectance and photoluminescence (PL) spectroscopie...
| Autores principales: | , , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6098019/ https://www.ncbi.nlm.nih.gov/pubmed/30120329 http://dx.doi.org/10.1038/s41598-018-30950-4 |