Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping prod...

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Detalles Bibliográficos
Autores principales: Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., Fadley, Charles S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6098022/
https://www.ncbi.nlm.nih.gov/pubmed/30120237
http://dx.doi.org/10.1038/s41467-018-05823-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6098022/
https://www.ncbi.nlm.nih.gov/pubmed/30120237
http://dx.doi.org/10.1038/s41467-018-05823-z

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