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Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping prod...
| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6098022/ https://www.ncbi.nlm.nih.gov/pubmed/30120237 http://dx.doi.org/10.1038/s41467-018-05823-z |