Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron

For the first time, compounds with lanthanum from the main family element Boron (LaB(x)) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaB(x) thin film was in the crystalline state with a relatively narrow optical...

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Detalles Bibliográficos
Autores principales: Xiao, Peng, Huang, Junhua, Dong, Ting, Xie, Jianing, Yuan, Jian, Luo, Dongxiang, Liu, Baiquan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6099821/
https://www.ncbi.nlm.nih.gov/pubmed/29882837
http://dx.doi.org/10.3390/molecules23061373

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6099821/
https://www.ncbi.nlm.nih.gov/pubmed/29882837
http://dx.doi.org/10.3390/molecules23061373

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