Stable and scalable 1T MoS(2) with low temperature-coefficient of resistance

Monolithic realization of metallic 1T and semiconducting 2H phases makes MoS(2) a potential candidate for future microelectronic circuits. A method for engineering a stable 1T phase from the 2H phase in a scalable manner and an in-depth electrical characterization of the 1T phase is wanting at large...

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Detalles Bibliográficos
Autores principales: Sharma, Chithra H., Surendran, Ananthu P., Varghese, Abin, Thalakulam, Madhu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6102259/
https://www.ncbi.nlm.nih.gov/pubmed/30127378
http://dx.doi.org/10.1038/s41598-018-30867-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6102259/
https://www.ncbi.nlm.nih.gov/pubmed/30127378
http://dx.doi.org/10.1038/s41598-018-30867-y

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