Recent Advances in β-Ga(2)O(3)–Metal Contacts

Ultra-wide bandgap beta-gallium oxide (β-Ga(2)O(3)) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6–4.9 eV, a high breakdown electric field of 8 MV/cm, and...

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Detalles Bibliográficos
Autores principales: Huan, Ya-Wei, Sun, Shun-Ming, Gu, Chen-Jie, Liu, Wen-Jun, Ding, Shi-Jin, Yu, Hong-Yu, Xia, Chang-Tai, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6104468/
https://www.ncbi.nlm.nih.gov/pubmed/30136254
http://dx.doi.org/10.1186/s11671-018-2667-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6104468/
https://www.ncbi.nlm.nih.gov/pubmed/30136254
http://dx.doi.org/10.1186/s11671-018-2667-2

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