Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering

Carrier diffusion is of paramount importance in many semiconductor devices, such as solar cells, photodetectors, and power electronics. Structural defects prevent such devices from reaching their full performance potential. Although a large carrier diffusion length indicates high material quality, i...

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Detalles Bibliográficos
Autores principales: Hu, Changkui, Chen, Qiong, Chen, Fengxiang, Gfroerer, T. H., Wanlass, M. W., Zhang, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6106988/
https://www.ncbi.nlm.nih.gov/pubmed/30839595
http://dx.doi.org/10.1038/s41377-018-0016-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6106988/
https://www.ncbi.nlm.nih.gov/pubmed/30839595
http://dx.doi.org/10.1038/s41377-018-0016-y

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