Dual Functions of V/SiO(x)/AlO(y)/p(++)Si Device as Selector and Memory

This letter presents dual functions including selector and memory switching in a V/SiO(x)/AlO(y)/p(++)Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-ele...

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Detalles Bibliográficos
Autores principales: Kim, Sungjun, Lin, Chih-Yang, Kim, Min-Hwi, Kim, Tae-Hyeon, Kim, Hyungjin, Chen, Ying-Chen, Chang, Yao-Feng, Park, Byung-Gook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6107449/
https://www.ncbi.nlm.nih.gov/pubmed/30141145
http://dx.doi.org/10.1186/s11671-018-2660-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6107449/
https://www.ncbi.nlm.nih.gov/pubmed/30141145
http://dx.doi.org/10.1186/s11671-018-2660-9

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