Dual Functions of V/SiO(x)/AlO(y)/p(++)Si Device as Selector and Memory

This letter presents dual functions including selector and memory switching in a V/SiO(x)/AlO(y)/p(++)Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-electrode side of the oxygen form the VO(x) layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiO(y) layer. 1.5-nm-thick AlO(y) layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-018-2660-9) contains supplementary material, which is available to authorized users.