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Dual Functions of V/SiO(x)/AlO(y)/p(++)Si Device as Selector and Memory
This letter presents dual functions including selector and memory switching in a V/SiO(x)/AlO(y)/p(++)Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-ele...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6107449/ https://www.ncbi.nlm.nih.gov/pubmed/30141145 http://dx.doi.org/10.1186/s11671-018-2660-9 |