Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs

This research presents the first experimental observation of the enhancement of the polarization Coulomb field (PCF) scattering by aggressive lateral scaling of GaN HEMTs. By decreasing the source-drain distance to 300 nm through n(+)-GaN ohmic regrowth, 70-nm gate AlGaN/GaN HEMTs achieved an extrem...

Descripción completa

Detalles Bibliográficos
Autores principales: Cui, Peng, Lv, Yuanjie, Fu, Chen, Liu, Huan, Cheng, Aijie, Luan, Chongbiao, Zhou, Yang, Lin, Zhaojun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6110763/
https://www.ncbi.nlm.nih.gov/pubmed/30150625
http://dx.doi.org/10.1038/s41598-018-31313-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6110763/
https://www.ncbi.nlm.nih.gov/pubmed/30150625
http://dx.doi.org/10.1038/s41598-018-31313-9

Ejemplares similares