Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing

Metal-Nb(2)O(5−x)-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead...

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Detalles Bibliográficos
Autores principales: Shank, Joshua C., Tellekamp, M. Brooks, Wahila, Matthew J., Howard, Sebastian, Weidenbach, Alex S., Zivasatienraj, Bill, Piper, Louis F. J., Doolittle, W. Alan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6113211/
https://www.ncbi.nlm.nih.gov/pubmed/30154545
http://dx.doi.org/10.1038/s41598-018-30727-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6113211/
https://www.ncbi.nlm.nih.gov/pubmed/30154545
http://dx.doi.org/10.1038/s41598-018-30727-9

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