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Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing
Metal-Nb(2)O(5−x)-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6113211/ https://www.ncbi.nlm.nih.gov/pubmed/30154545 http://dx.doi.org/10.1038/s41598-018-30727-9 |