Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiO(x) Passivation Layer

In this research, a passivated methodology was proposed for achieving good electrical characteristics for back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This methodology implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposit...

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Detalles Bibliográficos
Autores principales: Liu, Xianzhe, Wu, Weijing, Chen, Weifeng, Ning, Honglong, Zhang, Xiaochen, Yuan, Weijian, Xiong, Mei, Wang, Xiaofeng, Yao, Rihui, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6119873/
https://www.ncbi.nlm.nih.gov/pubmed/30111704
http://dx.doi.org/10.3390/ma11081440

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6119873/
https://www.ncbi.nlm.nih.gov/pubmed/30111704
http://dx.doi.org/10.3390/ma11081440

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