Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO(2)/Si(3)N(4)-coating

Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover,...

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Detalles Bibliográficos
Autores principales: König, Dirk, Hiller, Daniel, Wilck, Noël, Berghoff, Birger, Müller, Merlin, Thakur, Sangeeta, Di Santo, Giovanni, Petaccia, Luca, Mayer, Joachim, Smith, Sean, Knoch, Joachim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2018
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6122087/
https://www.ncbi.nlm.nih.gov/pubmed/30202694
http://dx.doi.org/10.3762/bjnano.9.210

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6122087/
https://www.ncbi.nlm.nih.gov/pubmed/30202694
http://dx.doi.org/10.3762/bjnano.9.210

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