Carrier Transport Properties of MoS(2) Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation

Over the past few years, two-dimensional materials have gained immense attention for next-generation electric sensing devices because of their unique properties. Here, we report the carrier transport properties of MoS(2) Schottky diodes under ambient as well as gas exposure conditions. MoS(2) field-...

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Detalles Bibliográficos
Autores principales: Kim, Sun Jun, Park, Jae Young, Yoo, SangHyuk, Umadevi, Palanivel, Lee, Hyunpyo, Cho, Jinsoo, Kang, Keonwook, Jun, Seong Chan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6123339/
https://www.ncbi.nlm.nih.gov/pubmed/30182283
http://dx.doi.org/10.1186/s11671-018-2652-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6123339/
https://www.ncbi.nlm.nih.gov/pubmed/30182283
http://dx.doi.org/10.1186/s11671-018-2652-9

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