Cargando…
Molecular dynamics simulation of aluminum nitride deposition: temperature and N : Al ratio effects
Heteroepitaxial growth of aluminum nitride (AIN) has been explored by experiments, but the corresponding growth mechanism is still unrevealed. Here, we use molecular dynamics simulations to study effects of temperature and N : Al flux ratio on deposited AlN. When the temperature increases from 1000...
Autores principales: | Zhang, Libin, Yan, Han, Zhu, Guo, Liu, Sheng, Gan, Zhiyin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6124064/ https://www.ncbi.nlm.nih.gov/pubmed/30225060 http://dx.doi.org/10.1098/rsos.180629 |
Ejemplares similares
-
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
por: Schilirò, Emanuela, et al.
Publicado: (2021) -
Glide Mobility of a-Type Edge Dislocations
in Aluminum Nitride by Molecular Dynamics Simulation
por: Zhao, Yinting, et al.
Publicado: (2021) -
Composite Nitride Nanoceramics in the System Titanium Nitride (TiN)-Aluminum Nitride (AlN) through High Pressure and High Temperature Sintering of Synthesis-Mixed Nanocrystalline Powders †
por: Drygaś, Mariusz, et al.
Publicado: (2021) -
Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source
por: Jung, Yong Chan, et al.
Publicado: (2020) -
Room-Temperature Quantum Emitter in Aluminum Nitride
por: Bishop, Sam G., et al.
Publicado: (2020)