Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy

With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that can opera...

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Detalles Bibliográficos
Autores principales: Omika, Keiichi, Tateno, Yasunori, Kouchi, Tsuyoshi, Komatani, Tsutomu, Yaegassi, Seiji, Yui, Keiichi, Nakata, Ken, Nagamura, Naoka, Kotsugi, Masato, Horiba, Koji, Oshima, Masaharu, Suemitsu, Maki, Fukidome, Hirokazu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6125406/
https://www.ncbi.nlm.nih.gov/pubmed/30185804
http://dx.doi.org/10.1038/s41598-018-31485-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6125406/
https://www.ncbi.nlm.nih.gov/pubmed/30185804
http://dx.doi.org/10.1038/s41598-018-31485-4

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