Cargando…
Tuning electronic properties of transition-metal dichalcogenides via defect charge
Defect engineering is a promising route for controlling the electronic properties of monolayer transition-metal dichalcogenide (TMD) materials. Here, we demonstrate that the electronic structure of MoS(2) depends sensitively on the defect charge, both its sign and magnitude. In particular, we study...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2018
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6134151/ https://www.ncbi.nlm.nih.gov/pubmed/30206260 http://dx.doi.org/10.1038/s41598-018-31941-1 |