Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors

The wide research and development on oxide thin-film transistors (TFTs) have led to considerable changes in mainstream technology in various electronic applications. Up to now, much research has been focusing on enhancing the performance of oxide TFTs and simplifying fabricating process. At the stag...

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Detalles Bibliográficos
Autores principales: Lee, Jinwon, Lim, Keon-Hee, Kim, Youn Sang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6141615/
https://www.ncbi.nlm.nih.gov/pubmed/30224825
http://dx.doi.org/10.1038/s41598-018-32233-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6141615/
https://www.ncbi.nlm.nih.gov/pubmed/30224825
http://dx.doi.org/10.1038/s41598-018-32233-4

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