Data on the early oxidation of SiO(2)-coated pure Ti and bulk Ti(5)Si(3) at 800 °C

Oxidation of pure Ti sputtered with a 250 nm layer of amorphous SiO(2) and bulk Ti(5)Si(3) was conducted at 800 °C for 2 or 32 h in a 1 standard cubic centimeter per minute (SCCM) O(2)/4 SCCM Ar environment (approximately pO(2) = 0.2 atm/20.3 kPa). Specimens were characterized using transmission ele...

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Detalles Bibliográficos
Autores principales: Chou, Kathleen, Chu, Peng-Wei, Marquis, Emmanuelle A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2018
Materias:
Materials Science
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6143759/
https://www.ncbi.nlm.nih.gov/pubmed/30238037
http://dx.doi.org/10.1016/j.dib.2018.08.173

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6143759/
https://www.ncbi.nlm.nih.gov/pubmed/30238037
http://dx.doi.org/10.1016/j.dib.2018.08.173

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