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Data on the early oxidation of SiO(2)-coated pure Ti and bulk Ti(5)Si(3) at 800 °C
Oxidation of pure Ti sputtered with a 250 nm layer of amorphous SiO(2) and bulk Ti(5)Si(3) was conducted at 800 °C for 2 or 32 h in a 1 standard cubic centimeter per minute (SCCM) O(2)/4 SCCM Ar environment (approximately pO(2) = 0.2 atm/20.3 kPa). Specimens were characterized using transmission ele...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Elsevier
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6143759/ https://www.ncbi.nlm.nih.gov/pubmed/30238037 http://dx.doi.org/10.1016/j.dib.2018.08.173 |