Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

Benefiting from the technique of vertically stacking 2D layered materials (2DLMs), an advanced novel device architecture based on a top‐gated MoS(2)/WSe(2) van der Waals (vdWs) heterostructure is designed. By adopting a self‐aligned metal screening layer (Pd) to the WSe(2) channel, a fixed p‐doped s...

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Detalles Bibliográficos
Autores principales: Guo, Zhongxun, Chen, Yan, Zhang, Heng, Wang, Jianlu, Hu, Weida, Ding, Shijin, Zhang, David Wei, Zhou, Peng, Bao, Wenzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2018
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145257/
https://www.ncbi.nlm.nih.gov/pubmed/30250784
http://dx.doi.org/10.1002/advs.201800237

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145257/
https://www.ncbi.nlm.nih.gov/pubmed/30250784
http://dx.doi.org/10.1002/advs.201800237

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