An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

Gallium oxide (Ga(2)O(3)) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this...

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Detalles Bibliográficos
Autores principales: Xue, HuiWen, He, QiMing, Jian, GuangZhong, Long, ShiBing, Pang, Tao, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145968/
https://www.ncbi.nlm.nih.gov/pubmed/30232628
http://dx.doi.org/10.1186/s11671-018-2712-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145968/
https://www.ncbi.nlm.nih.gov/pubmed/30232628
http://dx.doi.org/10.1186/s11671-018-2712-1

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