An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

Gallium oxide (Ga(2)O(3)) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this...

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Detalles Bibliográficos
Autores principales: Xue, HuiWen, He, QiMing, Jian, GuangZhong, Long, ShiBing, Pang, Tao, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145968/
https://www.ncbi.nlm.nih.gov/pubmed/30232628
http://dx.doi.org/10.1186/s11671-018-2712-1
Descripción
Sumario:Gallium oxide (Ga(2)O(3)) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga(2)O(3) semiconductor have been analyzed. And the recent investigations on the Ga(2)O(3)-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga(2)O(3)-based SBD for power electronics application has been analyzed.

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