An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

Gallium oxide (Ga(2)O(3)) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this...

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Autores principales: Xue, HuiWen, He, QiMing, Jian, GuangZhong, Long, ShiBing, Pang, Tao, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145968/
https://www.ncbi.nlm.nih.gov/pubmed/30232628
http://dx.doi.org/10.1186/s11671-018-2712-1
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author Xue, HuiWen
He, QiMing
Jian, GuangZhong
Long, ShiBing
Pang, Tao
Liu, Ming
author_facet Xue, HuiWen
He, QiMing
Jian, GuangZhong
Long, ShiBing
Pang, Tao
Liu, Ming
author_sort Xue, HuiWen
collection PubMed
description Gallium oxide (Ga(2)O(3)) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga(2)O(3) semiconductor have been analyzed. And the recent investigations on the Ga(2)O(3)-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga(2)O(3)-based SBD for power electronics application has been analyzed.
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spelling pubmed-61459682018-10-09 An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application Xue, HuiWen He, QiMing Jian, GuangZhong Long, ShiBing Pang, Tao Liu, Ming Nanoscale Res Lett Nano Review Gallium oxide (Ga(2)O(3)) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga(2)O(3) semiconductor have been analyzed. And the recent investigations on the Ga(2)O(3)-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga(2)O(3)-based SBD for power electronics application has been analyzed. Springer US 2018-09-19 /pmc/articles/PMC6145968/ /pubmed/30232628 http://dx.doi.org/10.1186/s11671-018-2712-1 Text en © The Author(s). 2018 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Review
Xue, HuiWen
He, QiMing
Jian, GuangZhong
Long, ShiBing
Pang, Tao
Liu, Ming
An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
title An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
title_full An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
title_fullStr An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
title_full_unstemmed An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
title_short An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
title_sort overview of the ultrawide bandgap ga(2)o(3) semiconductor-based schottky barrier diode for power electronics application
topic Nano Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145968/
https://www.ncbi.nlm.nih.gov/pubmed/30232628
http://dx.doi.org/10.1186/s11671-018-2712-1
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