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An Overview of the Ultrawide Bandgap Ga(2)O(3) Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
Gallium oxide (Ga(2)O(3)) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6145968/ https://www.ncbi.nlm.nih.gov/pubmed/30232628 http://dx.doi.org/10.1186/s11671-018-2712-1 |