Conversion of Multi-layered MoTe(2) Transistor Between P-Type and N-Type and Their Use in Inverter

Both p-type and n-type MoTe(2) transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe(2) transistors using Au as electrode and achieve the conversion of p-type transistor to n-type by annealing it in v...

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Detalles Bibliográficos
Autores principales: Liu, Junku, Wang, Yangyang, Xiao, Xiaoyang, Zhang, Kenan, Guo, Nan, Jia, Yi, Zhou, Shuyun, Wu, Yang, Li, Qunqing, Xiao, Lin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2018
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6150881/
https://www.ncbi.nlm.nih.gov/pubmed/30242523
http://dx.doi.org/10.1186/s11671-018-2721-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6150881/
https://www.ncbi.nlm.nih.gov/pubmed/30242523
http://dx.doi.org/10.1186/s11671-018-2721-0

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