Conversion of Multi-layered MoTe(2) Transistor Between P-Type and N-Type and Their Use in Inverter

Both p-type and n-type MoTe(2) transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe(2) transistors using Au as electrode and achieve the conversion of p-type transistor to n-type by annealing it in vacuum. Temperature-dependent in situ measurements assisted by the results given by first-principle simulations indicate that n-type conductance is an intrinsic property, which is attributed to tellurium vacancies in MoTe(2), while the device in air experiences a charge transfer which is caused by oxygen/water redox couple and is converted to air-stable p-type transistor. Based on p-type and n-type multi-layered MoTe(2) transistors, we demonstrate a complementary inverter with gain values as high as 9 at V(DD) = 5 V. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1186/s11671-018-2721-0) contains supplementary material, which is available to authorized users.