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Stacking faults in β-Ga(2)O(3) crystals observed by X-ray topography

Planar defects in [Image: see text]-oriented β-Ga(2)O(3) wafers were studied using X-ray topography. These planar defects were rectangular with dimensions of 50–150 µm, and the X-ray topography analysis revealed that they were stacking faults (SFs) enclosed by a single partial dislocation loop on th...

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Detalles Bibliográficos
Autores principales: Yamaguchi, Hirotaka, Kuramata, Akito
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6157702/
https://www.ncbi.nlm.nih.gov/pubmed/30279639
http://dx.doi.org/10.1107/S1600576718011093