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Stacking faults in β-Ga(2)O(3) crystals observed by X-ray topography
Planar defects in [Image: see text]-oriented β-Ga(2)O(3) wafers were studied using X-ray topography. These planar defects were rectangular with dimensions of 50–150 µm, and the X-ray topography analysis revealed that they were stacking faults (SFs) enclosed by a single partial dislocation loop on th...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6157702/ https://www.ncbi.nlm.nih.gov/pubmed/30279639 http://dx.doi.org/10.1107/S1600576718011093 |