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Theoretical predicted high-thermal-conductivity cubic Si(3)N(4) and Ge(3)N(4): promising substrate materials for high-power electronic devices

Ceramic substrates play key roles in power electronic device technology through dissipating heat, wherein both high thermal conductivity and mechanical strength are required. The increased power of new devices has led to the replacement of Al(2)O(3) by high thermal conducting AlN and further β-Si(3)...

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Detalles Bibliográficos
Autores principales: Xiang, Huimin, Feng, Zhihai, Li, Zhongping, Zhou, Yanchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6158267/
https://www.ncbi.nlm.nih.gov/pubmed/30258201
http://dx.doi.org/10.1038/s41598-018-32739-x