Cargando…
Theoretical predicted high-thermal-conductivity cubic Si(3)N(4) and Ge(3)N(4): promising substrate materials for high-power electronic devices
Ceramic substrates play key roles in power electronic device technology through dissipating heat, wherein both high thermal conductivity and mechanical strength are required. The increased power of new devices has led to the replacement of Al(2)O(3) by high thermal conducting AlN and further β-Si(3)...
Autores principales: | Xiang, Huimin, Feng, Zhihai, Li, Zhongping, Zhou, Yanchun |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6158267/ https://www.ncbi.nlm.nih.gov/pubmed/30258201 http://dx.doi.org/10.1038/s41598-018-32739-x |
Ejemplares similares
-
Isolation of cubic Si(3)P(4) in the form of nanocrystals
por: Nikiforova, Polina K, et al.
Publicado: (2023) -
Eu- and Tb-adsorbed Si(3)N(4) and Ge(3)N(4): tuning the colours with one luminescent host
por: Braun, Cordula, et al.
Publicado: (2022) -
Influence of plasma treatment on SiO(2)/Si and Si(3)N(4)/Si substrates for large-scale transfer of graphene
por: Lukose, R., et al.
Publicado: (2021) -
Structural, Electronic, and Thermodynamic Properties of Tetragonal t-Si(x)Ge(3−x)N(4)
por: Han, Chenxi, et al.
Publicado: (2018) -
Effects of β-Si(3)N(4) Seeds on Microstructure and Performance of Si(3)N(4) Ceramics in Semiconductor Package
por: Shen, Qiang, et al.
Publicado: (2023)