Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond

High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using T...

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Detalles Bibliográficos
Autores principales: Yin, Zongyou, Tordjman, Moshe, Lee, Youngtack, Vardi, Alon, Kalish, Rafi, del Alamo, Jesús A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6162073/
https://www.ncbi.nlm.nih.gov/pubmed/30276266
http://dx.doi.org/10.1126/sciadv.aau0480

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6162073/
https://www.ncbi.nlm.nih.gov/pubmed/30276266
http://dx.doi.org/10.1126/sciadv.aau0480

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