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Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond
High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using T...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6162073/ https://www.ncbi.nlm.nih.gov/pubmed/30276266 http://dx.doi.org/10.1126/sciadv.aau0480 |
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author | Yin, Zongyou Tordjman, Moshe Lee, Youngtack Vardi, Alon Kalish, Rafi del Alamo, Jesús A. |
author_facet | Yin, Zongyou Tordjman, Moshe Lee, Youngtack Vardi, Alon Kalish, Rafi del Alamo, Jesús A. |
author_sort | Yin, Zongyou |
collection | PubMed |
description | High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using TMOs as surface acceptors instead of previous molecular-like unstable acceptors. Similarly, surface-doped diamond with TMOs has recently yielded record sheet hole concentrations (2 × 10(14) cm(−2)) and launched the quest for its implementation in microelectronic devices. Regrettably, field-effect transistor operation based on this surface doping has been so far disappointing due to fundamental material obstacles such as (i) carrier scattering induced by nonhomogeneous morphology of TMO surface acceptor layer, (ii) stoichiometry changes caused by typical transistor fabrication process, and (iii) carrier transport loss due to electronic band energy misalignment. This work proposes and demonstrates a general strategy that synergistically surmounts these three barriers by developing an atomic layer deposition of a hydrogenated MoO(3) layer as a novel efficient surface charge acceptor for transistors. It shows high surface uniformity, enhanced immunity to harsh fabrication conditions, and benefits from tunable electronic gap states for improving carrier transfer at interfaces. These breakthroughs permit crucial integration of TMO surface doping into transistor fabrication flows and allow outperforming electronic devices to be reached. |
format | Online Article Text |
id | pubmed-6162073 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-61620732018-10-01 Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond Yin, Zongyou Tordjman, Moshe Lee, Youngtack Vardi, Alon Kalish, Rafi del Alamo, Jesús A. Sci Adv Research Articles High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using TMOs as surface acceptors instead of previous molecular-like unstable acceptors. Similarly, surface-doped diamond with TMOs has recently yielded record sheet hole concentrations (2 × 10(14) cm(−2)) and launched the quest for its implementation in microelectronic devices. Regrettably, field-effect transistor operation based on this surface doping has been so far disappointing due to fundamental material obstacles such as (i) carrier scattering induced by nonhomogeneous morphology of TMO surface acceptor layer, (ii) stoichiometry changes caused by typical transistor fabrication process, and (iii) carrier transport loss due to electronic band energy misalignment. This work proposes and demonstrates a general strategy that synergistically surmounts these three barriers by developing an atomic layer deposition of a hydrogenated MoO(3) layer as a novel efficient surface charge acceptor for transistors. It shows high surface uniformity, enhanced immunity to harsh fabrication conditions, and benefits from tunable electronic gap states for improving carrier transfer at interfaces. These breakthroughs permit crucial integration of TMO surface doping into transistor fabrication flows and allow outperforming electronic devices to be reached. American Association for the Advancement of Science 2018-09-28 /pmc/articles/PMC6162073/ /pubmed/30276266 http://dx.doi.org/10.1126/sciadv.aau0480 Text en Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Yin, Zongyou Tordjman, Moshe Lee, Youngtack Vardi, Alon Kalish, Rafi del Alamo, Jesús A. Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond |
title | Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond |
title_full | Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond |
title_fullStr | Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond |
title_full_unstemmed | Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond |
title_short | Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond |
title_sort | enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6162073/ https://www.ncbi.nlm.nih.gov/pubmed/30276266 http://dx.doi.org/10.1126/sciadv.aau0480 |
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