Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, ch...

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Detalles Bibliográficos
Autores principales: Liu, Jheng-Jie, Ho, Wen-Jeng, Chiang, Cho-Chun, Teng, Chi-Jen, Yu, Chia-Chun, Li, Yen-Chu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6163703/
https://www.ncbi.nlm.nih.gov/pubmed/30149627
http://dx.doi.org/10.3390/s18092800

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6163703/
https://www.ncbi.nlm.nih.gov/pubmed/30149627
http://dx.doi.org/10.3390/s18092800

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