Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors

Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demonstrated a simple electrochemical etching (ECE) process that can create layered porous GaN structures to form distributed Bragg reflectors for visible light at wafer scale. Here, we apply the same ECE...

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Detalles Bibliográficos
Autores principales: Griffin, Peter, Zhu, Tongtong, Oliver, Rachel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6163959/
https://www.ncbi.nlm.nih.gov/pubmed/30134525
http://dx.doi.org/10.3390/ma11091487

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6163959/
https://www.ncbi.nlm.nih.gov/pubmed/30134525
http://dx.doi.org/10.3390/ma11091487

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